US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on March 24 for "Semiconductor device and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,255, issued on March 24, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Semiconductor device and methods for forming the same" was invented by Wen-Shan Lee (Hsinchu City, Taiwan), Chung-Yeh Lee (Xinpu Township, Taiwan) and Fu-Hsin Chen (Zhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, an epitaxial layer on the substrate, a well region in the epitaxial layer, an insulating pillar extending into the epitaxial layer, a first doping region in the epitaxial layer and surrounding the insulating pillar, a second doping region under the first doping region, ...