US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on June 30 for "Semiconductor device and method for forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,354, issued on June 30, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Semiconductor device and method for forming the same" was invented by Cheng-Yu Wang (Chiayi City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor layer, a deep trench isolation structure, a shallow trench isolation structure, a first resistance layer, a second resistance layer, a first heavily doped region, a second heavily doped region, and a conductive line. The deep trench isolation structure separates the semiconductor device into a plurality of units including the first and second units. Th...