US Patent Issued to Vanguard International Semiconductor on Jan. 20 for "High electron mobility transistor structure and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,497, issued on Jan. 20, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan).

"High electron mobility transistor structure and fabrication method thereof" was invented by Shin-Cheng Lin (Hsinchu County, Taiwan) and Chia-Ching Huang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor structure includes a compound semiconductor channel layer disposed on a substrate, a compound semiconductor barrier layer disposed on the compound semiconductor channel layer, and a compound semiconductor cap layer disposed on the compound semiconductor barrier layer. The compound semiconductor cap l...