ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,709, issued on Sept. 15, was assigned to Ushio Denki K.K. (Tokyo).

"Semiconductor laser device" was invented by Yutaka Inoue (Tokyo), Shigeta Sakai (Tokyo) and Masato Hagimoto (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor laser device includes a submount and an edge-emitting semiconductor laser chip mounted to the submount by a junction-down method. The semiconductor laser chip includes a semiconductor substrate, a stacked growth layer in which m (mless than=1) laser resonators are formed, m P electrodes, and an N electrode. When a beam emission direction is denoted as a z-axis, a direction of the thickness of the semiconduc...