US Patent Issued to UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY on Sept. 29 for "Metal oxide thin film precursor, method of fabricating metal oxide thin film using the same, and semiconductor device including the metal oxide thin film" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,747,258, issued on Sept. 29, was assigned to UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY (Yongin-si, South Korea).

"Metal oxide thin film precursor, method of fabricating metal oxide thin film using the same, and semiconductor device including the metal oxide thin film" was invented by Jongwook Park (Seoul, South Korea), Woojin Jeon (Yongin-si, South Korea), Sunwoo Park (Gwangju-si, South Korea), Hayoon Lee (Incheon, South Korea), Sang Wook Park (Paju-si, South Korea) and Yoona Choi (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a metal oxide thin film precursor represented by Chemical Formula 1, a me...