US Patent Issued to UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY on Nov. 3 for "Method of permanently phase-transiting semimetal using ion implantation and semimetal phase-transited thereby" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,644, issued on Nov. 3, was assigned to UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY (Yongin-si, South Korea).

"Method of permanently phase-transiting semimetal using ion implantation and semimetal phase-transited thereby" was invented by Suk Ho Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a technology of permanently phase-transiting a semimetal using ion implantation. More particularly, the permanent phase transition of a dirac semimetal into a weyl semimetal can be induced by implanting non-magnetic material ions into the dirac semimetal according to an embodiment."

The patent was filed on...