US Patent Issued to United Semiconductor (Xiamen) on Nov. 3 for "Method for detecting defects of a semiconductor substrate" (Singaporean, Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,182, issued on Nov. 3, was assigned to United Semiconductor (Xiamen) Co. Ltd. (Xiamen, China).

"Method for detecting defects of a semiconductor substrate" was invented by Ching-Shu Lo (Singapore), Yan Cai (Singapore), Tsung Che Lin (Singapore), Qiao Lin Chen (Shamen City, China) and Wen Yi Tan (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention relates to a method for detecting defects of a semiconductor substrate, which comprises the following steps: providing a substrate, wherein the substrate comprises at least one alignment mark; capturing the substrate to obtain a color image, wherein the color image comprises at least on...