US Patent Issued to United Semiconductor (Xiamen) on March 3 for "Manufacturing method of semiconductor structure" (Chinese, Singaporean Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,675, issued on March 3, was assigned to United Semiconductor (Xiamen) Co. Ltd. (Xiamen, China).

"Manufacturing method of semiconductor structure" was invented by Rui Ju (Shamen, China), Hongxu Shao (Singapore), Jinjian Ouyang (Xiamen, China) and Wen Yi Tan (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a method for manufacturing a semiconductor structure, which comprises the following steps: a high voltage metal oxide semiconductor (HVMOS) is provided, the high voltage metal oxide semiconductor comprises a substrate, and the substrate comprises an NMOS region and a PMOS region, the NMOS region and the PMOS regio...