US Patent Issued to United Semiconductor (Xiamen) on March 24 for "Semiconductor structure and fabrication method thereof" (Chinese Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,462, issued on March 24, was assigned to United Semiconductor (Xiamen) Co. Ltd. (Xiamen, China).

"Semiconductor structure and fabrication method thereof" was invented by Ji He Huang (Suzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate; a top metal layer disposed in a top inter-metal dielectric (IMD) layer on the substrate; a first passivation layer covering the top metal layer and the top IMD layer; a pad layer disposed on the first passivation layer and electrically connected to the top metal layer; a spin-on glass (SOG) layer covering the pad layer and the first passivation layer; and a...