US Patent Issued to United Semiconductor (Xiamen) on March 24 for "Method for forming a semiconductor structure" (Chinese, Singaporean, Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,444, issued on March 24, was assigned to United Semiconductor (Xiamen) Co. Ltd. (Xiamen, China).

"Method for forming a semiconductor structure" was invented by Jian Liu (Xiamen, China), Chen Chen (Singapore), Chin-Chun Huang (Hsinchu County, Taiwan), Wen Yi Tan (Xiamen, China) and Jinjian Ouyang (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention uses the thinned second pad oxide layer as the pad oxide layer for the subsequent shallow trench isolation process. Therefore, it is not necessary to remove the entire pad oxide layer on the substrate surface after the P-type high-voltage ion well thermal drive-in process. T...