US Patent Issued to UNITED MICROELECTRONICS on Sept. 1 for "Semiconductor structure and method of preventing charging damage thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,255, issued on Sept. 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Semiconductor structure and method of preventing charging damage thereof" was invented by Ming-Te Lin (Hsinchu City, Taiwan), Wen-Chun Chang (Hsinchu City, Taiwan), Sung-Nien Kuo (Hsinchu City, Taiwan), Tzu-Chun Chen (Hsinchu City, Taiwan) and Kuan-Cheng Su (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided in the present invention, including a substrate, a deep N-well formed in the substrate, a first well formed in the deep N-well, a first gate formed on the first well, a first source and a first dr...