ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,652, issued on Oct. 27, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).
"Memory structure and manufacturing method thereof" was invented by Chia-Wen Wang (Tainan City, Taiwan), Chien-Hung Chen (Hsinchu City, Taiwan), Chia-Hui Huang (Tainan City, Taiwan), Ling Hsiu Chou (Tainan City, Taiwan), Jen Yang Hsueh (Tainan City, Taiwan) and Chih-Yang Hsu (Tainan City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a memory structure and a manufacturing method thereof. The memory structure includes a substrate having first and second regions, first and second isolation structures in the substrate, a charge storage layer on...