US Patent Issued to UNITED MICROELECTRONICS on Nov. 3 for "Semiconductor device having grounded buried oxide layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,808, issued on Nov. 3, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Semiconductor device having grounded buried oxide layer" was invented by Chung-Sung Chiang (Kaohsiung City, Taiwan), Yu-Ping Wang (Hsinchu City, Taiwan), I-Ming Tseng (Kaohsiung City, Taiwan), Yu-Chun Chen (Kaohsiung City, Taiwan) and Yi-An Shih (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first wafer, a second wafer, a dielectric layer and a first metal structure. The first wafer includes a first substrate and a first interconnection layer disposed on the first substrate. The second wafer include...