ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,782,916, issued on Nov. 3, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Method of simulating 3D feature profile by using SEM image" was invented by Yen-Ting Pan (New Taipei City, Taiwan) and Chung-Yi Chiu (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for simulating a three-dimensional (3D) feature profile of a semiconductor device disposed in a substrate is disclosed. The method utilizes a scanning electron microscope (SEM) image of a feature pattern within a material layer. The feature pattern has an inner edge and an outer edge. The positions of these edges are first identified, followed by the ...