US Patent Issued to UNITED MICROELECTRONICS on Nov. 25 for "Magnetic random access memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,454, issued on Nov. 25, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Magnetic random access memory structure" was invented by Hui-Lin Wang (Taipei, Taiwan), Che-Wei Chang (Taichung, Taiwan), Ching-Hua Hsu (Kaohsiung, Taiwan), Chen-Yi Weng (New Taipei, Taiwan) and Po-Kai Hsu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic random access memory structure includes a first dielectric layer; a bottom electrode layer disposed on the first dielectric layer; a spin orbit coupling layer disposed on the bottom electrode layer; a magnetic tunneling junction (MTJ) element disposed on the spin orbit coupling layer; ...