US Patent Issued to United Microelectronics on May 19 for "Semiconductor memory structure with contact passing through opening in control gate" (Singaporean, Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,187, issued on May 19, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Semiconductor memory structure with contact passing through opening in control gate" was invented by Boon Keat Toh (Singapore), Chih-Hsin Chang (Hsinchu County, Taiwan), Szu Han Wu (Hsinchu City, Taiwan) and Chi Ren (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate having a first memory region. The first memory region includes a first dielectric layer, a first floating gate, a first inter-gate dielectric layer, a control gate and a first c...