US Patent Issued to UNITED MICROELECTRONICS on May 19 for "Integrated low-voltage finFETs and high-voltage planar transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,231, issued on May 19, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Integrated low-voltage finFETs and high-voltage planar transistors" was invented by Chih-Kai Hsu (Tainan City, Taiwan), Ssu-I Fu (Kaohsiung City, Taiwan), Yu-Hsiang Lin (New Taipei City, Taiwan) and Chien-Ting Lin (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a first transistor, a second transistor and a third transistor. The substrate includes a high-voltage (HV) area, a medium-voltage (MV) area, and a low-voltage (LV) area. The first transistor is disposed in the HV area and includes a fir...