ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,612, issued on March 31, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).
"Structure of semiconductor device and method for fabricating the same" was invented by Zhi-Biao Zhou (Singapore).
According to the abstract* released by the U.S. Patent & Trademark Office: "A structure of a semiconductor device is provided, including a circuit substrate. A first metal bulk layer is disposed on the circuit substrate. A buffer layer is disposed on the first metal bulk layer. An absorbing layer is disposed on the buffer layer. A first electrode layer is disposed on the absorbing layer. A plurality of piezoelectric material units are disposed on the first electrode layer. A pr...