ALEXANDRIA, Va., March 31 -- United States Patent no. 12,592,280, issued on March 31, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).
"Resistive random access memory and memory mini-array thereof with improved reliability" was invented by Shu-Hung Yu (Kaohsiung City, Taiwan), Chuan-Fu Wang (Miaoli County, Taiwan) and Chung-Chin Shih (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory includes a first switch transistor, a second switch transistor, a third switch transistor, a fourth switch transistor, a first resistive memory element and a second resistive memory element. Each of the first switch transistor, the second switch transistor, the third switch tran...