US Patent Issued to UNITED MICROELECTRONICS on March 31 for "Manufacturing method of gate structure" (Taiwanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,663, issued on March 31, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Manufacturing method of gate structure" was invented by Tzu-Feng Weng (Tainan City, Taiwan), Chao-Sheng Cheng (Taichung City, Taiwan) and Chi-Cheng Huang (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a gate structure includes the following steps. A semiconductor substrate is provided. An isolation structure is formed in the semiconductor substrate and surrounds an active region in the semiconductor substrate. A gate pattern is formed on the active region and the isolation structure. The gate pattern inc...