US Patent Issued to UNITED MICROELECTRONICS on March 3 for "Semiconductor memory device and fabrication method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,630, issued on March 3, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Semiconductor memory device and fabrication method thereof" was invented by Hui-Lin Wang (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate, a first interlayer dielectric layer on the substrate, a second interlayer dielectric layer on the first interlayer dielectric layer, a via positioned in the second interlayer dielectric layer in the memory region, and a data storage structure stacked on the via. The second interlayer dielectric layer has a first minimum thickness in the memory region...