US Patent Issued to UNITED MICROELECTRONICS on March 3 for "Semiconductor memory device and fabrication method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,770, issued on March 3, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Semiconductor memory device and fabrication method thereof" was invented by Hui-Lin Wang (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate, a first interlayer dielectric layer, a second interlayer dielectric layer, a via in the second interlayer dielectric layer in a memory region, and a data storage structure on the via. The second interlayer dielectric layer includes a first recess structure and a second recess structure. The first recess structure has a first recessed thickness betwee...