ALEXANDRIA, Va., March 3 -- United States Patent no. 12,567,450, issued on March 3, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).
"MRAM circuit and layout" was invented by Ting-Hao Chang (Kaohsiung City, Taiwan), Chien-Yu Ko (Tainan City, Taiwan), Cheng-Tung Huang (Kaohsiung City, Taiwan) and Wen-Liang Huang (Taoyuan City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A MRAM circuit is provided in the present invention, wherein each memory cell has three transistors, including a first transistor, a third transistor and a second transistor connected in order and series connection, a first node is connected between the first transistor and the third transistor, a second node is...