ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,422, issued on March 24, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).
"Semiconductor device and method for fabricating the same" was invented by Hui-Lin Wang (Taipei City, Taiwan), Chen-Yi Weng (New Taipei City, Taiwan), Ching-Hua Hsu (Kaohsiung City, Taiwan) and Jing-Yin Jhang (Tainan City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a metal interconnection in the IMD layer, forming a magnetic tunneling junction (MTJ) on the metal interconnection, and performing a trimming pro...