US Patent Issued to UNITED MICROELECTRONICS on March 24 for "Electrostatic discharge protection circuit using GaN-based devices" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,293, issued on March 24, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Electrostatic discharge protection circuit using GaN-based devices" was invented by Yu-Hsuan Chang (New Taipei City, Taiwan), Ching-Wei Li (Hsinchu City, Taiwan), Jih-San Lee (Hsinchu City, Taiwan) and Tien-Hao Tang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ESD protection circuit using GaN devices, with an ESD protection block including a first sub-block and a second sub-block. The first sub-block includes a trigger coupled to a gate of a power HEMT, a 2DEG resistor coupled to another terminal of the trigger, a LV-HEMT with...