US Patent Issued to UNITED MICROELECTRONICS on March 17 for "High electron mobility transistor and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,684, issued on March 17, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"High electron mobility transistor and method for fabricating the same" was invented by Po-Yu Yang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a high electron mobility transistor (HEMT) includes the steps of first forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a compressive stress layer adjacent to one side of the p-type semiconductor layer, and then forming a tensile stress layer adjacent to another si...