US Patent Issued to UNITED MICROELECTRONICS on June 30 for "Capacitor on fin structure and fabricating method of the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,340, issued on June 30, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Capacitor on fin structure and fabricating method of the same" was invented by Hsin-Yu Chen (Nantou County, Taiwan), Chun-Hao Lin (Kaohsiung City, Taiwan), Yuan-Ting Chuang (Yilan County, Taiwan) and Shou-Wei Hsieh (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor on a fin structure includes a fin structure. A dielectric layer covers the fin structure. A first electrode extension is embedded within the fin structure. A first electrode penetrates the dielectric layer and contacts the first electrode extension. A second electr...