US Patent Issued to UNITED MICROELECTRONICS on June 23 for "TSV structure and fabricating method of the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,938, issued on June 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"TSV structure and fabricating method of the same" was invented by Hui-Lin Wang (Taipei City, Taiwan), I-Fan Chang (Tainan City, Taiwan) and Jia-Rong Wu (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A TSV structure includes a substrate. A through via penetrates the substrate. A copper layer fills the through via. A trench is embedded in the substrate and surrounds the copper layer, and a material layer fills the trench. The material layer includes W, Cr, Ir, Re, Zr, SiOC glass, hydrogen-containing silicon oxynitride, silicon oxide ...