US Patent Issued to UNITED MICROELECTRONICS on June 23 for "MRAM circuit and layout" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,626, issued on June 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"MRAM circuit and layout" was invented by Ting-Hao Chang (Kaohsiung City, Taiwan), Chien-Yu Ko (Tainan City, Taiwan), Cheng-Tung Huang (Kaohsiung City, Taiwan) and Wen-Liang Huang (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A MRAM circuit is provided in the present invention, wherein each memory cell includes a first transistor with a first gate, a first source and a first drain and the first gate is connected to a first word line, a second transistor with a second gate, a second source and a second drain and the second gate is con...