US Patent Issued to UNITED MICROELECTRONICS on July 7 for "Superlattice structure with stress relaxation layers therein" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,457, issued on July 7, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Superlattice structure with stress relaxation layers therein" was invented by Yu-Ming Hsu (Changhua County, Taiwan), Chun-Liang Kuo (Kaohsiung City, Taiwan), Yen-Hsing Chen (Taipei City, Taiwan), Tsung-Mu Yang (Tainan City, Taiwan) and Yu-Ren Wang (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A superlattice structure includes a substrate. A first superlattice stack is disposed on the substrate. The first superlattice stack includes a first superlattice layer, a second superlattice layer and a third superlattice layer disposed from bott...