US Patent Issued to United Microelectronics on Feb. 24 for "Power MOSFET and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,772, issued on Feb. 24, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Power MOSFET and manufacturing method thereof" was invented by Yu-Hsiang Shu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a power MOSFET and a manufacturing method thereof. The power MOSFET includes a substrate, base, doped and drift regions, a gate structure, an insulating layer, a conductive layer, a source electrode and a drain electrode. The base region is in the substrate and adjacent to a first surface of the substrate. The doped region is in the base region and adjacent to the first surface. The drift region is under the b...