US Patent Issued to UNITED MICROELECTRONICS on Feb. 24 for "Method for forming ohmic contacts on compound semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,800, issued on Feb. 24, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Method for forming ohmic contacts on compound semiconductor devices" was invented by Da-Jun Lin (Kaohsiung, Taiwan), Fu-Yu Tsai (Tainan, Taiwan), Bin-Siang Tsai (Changhua County, Taiwan) and Chung-Yi Chiu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming ohmic contacts on a compound semiconductor device is disclosed. A channel layer is formed on a substrate. A barrier layer is formed on the channel layer. A passivation layer is formed on the barrier layer. A contact area is formed by etching through the passivation layer and t...