ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,883, issued on Feb. 24, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Image sensor and manufacturing method thereof" was invented by Zhaoyao Zhan (Singapore), Qianwei Ding (Singapore), Xiaohong Jiang (Singapore) and Ching Hwa Tey (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides an image sensor, the image sensor includes a substrate, a first circuit layer on the substrate, at least one nanowire photodiode. located on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, a...