US Patent Issued to UNITED MICROELECTRONICS on Feb. 24 for "Complementary high electron mobility transistor" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,764, issued on Feb. 24, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Complementary high electron mobility transistor" was invented by Hsin-Ming Hou (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A complementary high electron mobility transistor includes an N-type HEMT and an P-type HEMT disposed on the substrate. The N-type HEMT includes a first undoped gallium nitride layer, a first quantum confinement channel, a first undoped group III-V nitride compound layer and an N-type group III-V nitride compound layer disposed from bottom to top. A first gate is disposed on the N-type group III-V nitride compound layer....