ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,303, issued on Feb. 17, was assigned to UNITED MICROELECTRONICS CORP. (Hsinchu, Taiwan).
"Capacitor structure and method for manufacturing the same" was invented by Teng-Chuan Hu (Tainan, Taiwan), Chu-Fu Lin (Kaohsiung, Taiwan) and Chun-Hung Chen (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor structure comprises a substrate having a first side and a second side opposite to the first side; a plurality of first trenches formed on the first side of the substrate; a plurality of second trenches formed on the second side of the substrate; a first capacitor extending along the first side and into the first trenches; and a secon...