ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,462, issued on Dec. 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).
"Work function metal gate device" was invented by Chih-Wen Huang (Tainan, Taiwan) and Shih-An Huang (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A work function metal gate device includes a gate, a drift region, a source, a drain and a first isolation structure. The gate includes a convex stair-shaped work function metal stack or a concave stair-shaped work function metal stack disposed on a substrate. The drift region is disposed in the substrate below a part of the gate. The source is located in the substrate and the drain is located in the ...