US Patent Issued to UNITED MICROELECTRONICS on Dec. 23 for "Semiconductor memory device and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,604, issued on Dec. 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor memory device and fabrication method thereof" was invented by Po-Yu Yang (Hsinchu, Taiwan) and Chung-Yi Chiu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate and a transistor disposed on the substrate. The transistor includes a source doped region, a drain doped region, a channel region, and a gate over the channel region. A data storage region is in proximity to the transistor and recessed into the substrate. The data storage region includes a ridge and a V-shaped groove. A bottom ...