US Patent Issued to United Microelectronics on Dec. 2 for "Semiconductor device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,446, issued on Dec. 2, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Semiconductor device and method of forming the same" was invented by Huan Chi Ma (Tainan, Taiwan), Kuan-Ting Lin (New Taipei, Taiwan), Ying Jie Huang (Changhua County, Taiwan) and Chien-Wen Yu (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including an enhancement mode (E-mode) high electron mobility transistor (HEMT). The E-mode HEMT includes a substrate, and a channel layer disposed on the substrate. A barrier structure disposed on the channel layer. A pair of source/drain (S/D) metals respectively disposed ...