US Patent Issued to UNITED MICROELECTRONICS on Dec. 2 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,447, issued on Dec. 2, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for forming the same" was invented by Jian-Feng Li (Tainan, Taiwan), Chia-Hua Chang (Kaohsiung, Taiwan) and Hsiang-Chieh Yen (Penghu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor includes a substrate having a continuous planar front surface, a first epitaxial layer directly and continuous disposed on the continuous planar front surface of the substrate, a plurality of first recesses arranged in an upper portion of the first epitaxial layer, a second epitaxial layer directly dispo...