ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,492, issued on Dec. 2, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).
"Manufacturing method of semiconductor structure" was invented by Shin-Hung Li (Nantou County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a manufacturing method of a semiconductor structure, the method includes providing a substrate, forming two shallow trench isolation structures in the substrate. A first region, a second region and a third region are defined between the two shallow trench isolation structures, and the second region is located between the first region and the third region. Next, an oxide layer is formed in the f...