US Patent Issued to UNITED MICROELECTRONICS on Dec. 16 for "Semiconductor device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,835, issued on Dec. 16, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Pei-Jou Lee (Tainan, Taiwan), Kun-Chen Ho (Tainan, Taiwan), Hsuan-Hsu Chen (Tainan, Taiwan) and Chun-Lung Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate and a top electrode on the MTJ; forming a first inter-metal dielectric (IMD) layer around the MTJ and the top electrode; forming a stop layer on the first IMD layer; forming a second IMD lay...