US Patent Issued to UNITED MICROELECTRONICS on Dec. 16 for "Rinse process after forming fin-shaped structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,639, issued on Dec. 16, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Rinse process after forming fin-shaped structure" was invented by Po-Chang Lin (Tainan, Taiwan), Bo-Han Huang (Chiayi County, Taiwan), Chih-Chung Chen (Tainan, Taiwan), Chun-Hsien Lin (Tainan, Taiwan), Shih-Hung Tsai (Tainan, Taiwan) and Po-Kuang Hsieh (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-sha...