US Patent Issued to UNITED MICROELECTRONICS on Aug. 4 for "RRAM structure and fabricating method of the same" (Singaporean, Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,928, issued on Aug. 4, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"RRAM structure and fabricating method of the same" was invented by Wei Cheng (Singapore), Zhen Chen (Singapore) and Shen-De Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An RRAM structure includes a dielectric layer. A bottom electrode, a resistive switching layer and a top electrode are disposed from bottom to top on the dielectric layer. A spacer is disposed at sidewalls of the bottom electrode, the resistive switching layer and the top electrode. The spacer includes an L-shaped spacer and a sail-shaped spacer. The L-shaped s...