ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,963, issued on Aug. 25, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Manufacturing method of semiconductor structure" was invented by Shin-Hung Li (Nantou County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor structure including the following steps is disclosed. A definition layer is formed on a substrate. The definition layer includes a first dielectric layer and a second dielectric layer. A first isotropic etching process is performed on the second dielectric layer to form a first opening in the second dielectric layer. A portion of the first opening is located under the patter...