ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,503, issued on March 31, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).
"Pillar-shaped semiconductor device and method for producing the same" was invented by Nozomu Harada (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "An N+ layer and a P+ layer that are impurity regions at a bottom portion are formed using as etching masks top first mask material layers and SiN layers surrounding Si pillars and formed in a self-aligned manner with respect to the Si pillars and a SiO2 layer. Then, a SiO2 layer is formed that has an upper surface located at the level of the bottom portions of the N+ layer and the P+ layer. Then, a W l...