ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,408, issued on July 7, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).
"Memory device using semiconductor element" was invented by Masakazu Kakumu (Tokyo), Iwao Kunishima (Tokyo), Koji Sakui (Tokyo) and Nozomu Harada (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a memory semiconductor device in which a p-type semiconductor region is formed at an n+layer to which a bit line is connected, an n-type semiconductor layer to which a source line is connected is further formed, a first gate insulating layer and a first gate conductor layer to which a word line is connected exist, a second gate insulating layer and a...