US Patent Issued to Unimicron Technology on May 26 for "Vapor chamber structure and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,638,247, issued on May 26, was assigned to Unimicron Technology Corp. (Taoyuan City, Taiwan).

"Vapor chamber structure and manufacturing method thereof" was invented by Chin-Sheng Wang (Taoyuan City, Taiwan) and Ra-Min Tain (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vapor chamber structure includes a first flexible substrate, a second flexible substrate, a spacer, a flexible sealing member, and a working fluid. The first flexible substrate includes a first organic material layer, a first copper foil layer, and a first capillary structure layer. The second flexible substrate includes a second organic material layer, a second ...