ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,744,188, issued on Sept. 22, was assigned to ULVAC INC. (Chigasaki, Japan).
"Etching method" was invented by Kazuhiko Tonari (Chigasaki, Japan), Youhei Ono (Chigasaki, Japan), Jinhyeok Son (Pyeongtaek Si, South Korea), Jun-chang Park (Pyeongtaek-Si, South Korea), Hyunhwa Lee (Pyeongtaek-Si, South Korea) and Jinju Bae (Pyeongtaek-Si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method includes generating reactive plasma containing hydrogen and nitrogen in a discharge tube having an inner surface formed from an inorganic oxide and supplying the reactive plasma to a processing chamber connected to the discharge tube, and generatin...