US Patent Issued to UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY on July 28 for "Low temperature synthesis method of two dimensional material" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,593, issued on July 28, was assigned to UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY (Seoul, South Korea).

"Low temperature synthesis method of two dimensional material" was invented by Jong-Hyun Ahn (Seoul, South Korea), Ahn Tuan Hoang (Seoul, South Korea), Beom Jin Kim (Seoul, South Korea) and Luhing Hu (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A synthesis method of a 2D material according to the present disclosure includes preparing a substrate; maintaining a first zone of a furnace and a second zone adjacent to the first zone, in which the target substrate is disposed, at a first temperature and a second tempe...