US Patent Issued to UCHICAGO ARGONNE on Aug. 4 for "Method for producing porous nanocrystalline silicon" (Illinois Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,698,211, issued on Aug. 4, was assigned to UCHICAGO ARGONNE LLC (Chicago).

"Method for producing porous nanocrystalline silicon" was invented by Sumit Bhattacharya (Darien, Ill.), Daniel Abraham (Bolingbrook, Ill.) and Abdellatif M. Yacout (Naperville, Ill.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of the producing nanocrystalline silicon particulate from a silicate source includes removing contaminants, such as organics and heavy metals, and alumina from the silicate source by treating the silicate source with first and second acidic leaching solutions to form a first intermediate product. The first intermediate product is then reduced by ...